Power
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CoolGan 600V e-mode HEMT for Increased Efficiency and Reliability in Telecom Power Applications The CoolGaN 600V e-mode HEMT from Infineon Technologies ensures to deliver high efficiency and reliability in telecom power supply systems. This new device is the key component in Delta’s DPR 3000E EnergE rectifiers and enables an energy efficiency of 98%. Encompassed in the DFN8x8 package, it offers a power density of 56.8 W/in³ and provides high performance while… |
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650V CoolSic Hybrid Discrete for Improved Efficiency and Reliability in Automotive Applications Infineon’s 650 V CoolSiC Hybrid Discrete is a high-performing, reliable, and cost-efficient device specifically designed for automotive purposes. Comprising of 50 A TRENCHSTOP 5 fast-switching IGBT and a CoolSiC Schottky diode, this new device builds a perfect cost-performance trade-off for hard-switching topologies and supports high system integrity in addition to bi-… |
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1200V αSiC MOSFETs to Meet High Efficiency and Reliability Requirements of Electric Vehicle Applications Alpha and Omega Semiconductor have collaboratively come up with AEC-Q101 qualified 1200V silicon carbide (SiC) αSiC MOSFETs, AOM033V120X2Q in an optimized TO-247-4L package. These new automotive-grade αSiC MOSFETs have been specifically designed to reduce the system’s size and weight while increasing range and enabling significantly faster-charging speeds. The devices… |
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Compact LDO Regulators Offer High Ripple Rejection Ratio for Enhanced Power Stabilization in Smartphones and Wearable Devices The new TCR5RG series of 45 LDO regulators from Toshiba is housed in a thin and compact WCSP4F package and offers a high ripple rejection ratio of 100dB (typ.) for enhanced power stabilization to DC power lines in mobile devices. These new regulators combine a wide-gap circuit, a low-pass filter that allows only extremely low frequencies to pass, and a low-noise, high-speed… |
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Silicon Carbide MOSFET Module Released for Higher Efficiency and Miniaturization of Industrial Equipment MG800FXF2YMS3, a silicon carbide (SiC) MOSFET module from Toshiba Electronic Devices integrates newly developed dual-channel SiC MOSFET chips with 3300V and 800A rating for industrial applications. These new SiC MOSFET modules contribute to the high efficiency and miniaturization of industrial equipment. The product adopts an iXPLV (intelligent… |
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Single-Ended Primary Inductor (SEPIC) Converter Design with XL6009 In the field of DC-DC Converters, A single-ended primary-inductor converter or SEPIC converter is a type of converter that uses a boost type control topology to step up or step down the input voltage. After reading this, the first question that will come to your mind would be, is it like a glorified Classic Buck-Boost Converter? The answer is yes and no. A classic buck-… |
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Radiation-Hardened DC to DC Power Converters with COTS Technology to Maximize System Performance and Reliability in Space Applications Microchip’s SA50-120 series is the family of space-qualified COTS-based radiation-hardened DC to DC power converters that help minimize risk and lower development costs in space applications. Offering eight million hours Mean Time Between Failure (MTBF) and up to 87% efficiency, the SA50-120 power converters maximize system performance and reliability. … |
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Ultra-Low IQ PMIC to Power NXP iMX8M Nano for High Performance in Embedded Artists Industrial Control Boards ROHM Semiconductor has recently announced that Embedded Artists is using their highly integrated PMIC, BD71847AMWV along with i.MX 8M Nano from NXP on the new iMX8M Nano uCOM board to deliver a robust and cost-effective solution for industrial applications. This new uCOM board measures 45mm x 42mm and features the i.MX 8M Nano processor with Quad-core ARM Cortex-A53 and… |
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Third-Generation 1200V SiC MOSFETs to Improve Efficiency and Ultra-Fast Switching Speeds in Industrial and Automotive Applications GeneSiC Semiconductor’s new third-generation 1200V G3R SiC MOSFETs with low on-state resistance and best figure-of-merits can surpass its currently available options in terms of performance, robustness, and quality to harness extremely high levels of efficiency and system reliability in automotive and industrial applications. Faster switching frequency, increased power… |
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New GaNFast Power IC for High-Power Performance in Mobile and Consumer Power Electronics With 66 % more power compared to traditional silicon chips available in the market, the new NV6128 high power 650V/800V-rated GaNFast power IC from Navitas Semiconductor is suitable for high-power mobile and consumer power electronics. This 70 mOhm device in compact 6 x 8 mm PQFN package is a next-generation semiconductor technology that is capable of running up to 20… |
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100V High-Current Photorelay Released in DIP4 Package for Industrial Equipment and Building Automation Systems Toshiba Electronics has released a 100 V high-current photorelay, TLP241B for industrial equipment building automation systems and mechanical relay replacements, security systems, heating, ventilation and air conditioning (HVAC), Battery Management System (BMS), etc. Encompassed in a DIP4 package, this new device comprises of a photo MOSFET optically coupled to an infrared… |
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Resettable eFuse with Adjustable Over-Voltage Protection and Flagging Capabilities Provides Additional Safety in Consumer Electronic Devices Toshiba Electronics has introduced a new function-rich resettable eFuse, TCKE712BNL featuring adjustable over-voltage protection and flagging capabilities. Ensuring a high degree of safety, this new device can be used in various consumer electronics goods including cameras, cordless cleaner, and power tools, cleaning robots, servers, smart, speakers, thermostats, and… |
