1200V αSiC MOSFETs to Meet High Efficiency and Reliability Requirements of Electric Vehicle Applications

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ByRajni Setia 0

AOM033V120X2Q 1200V Silicon Carbide αSiC MOSFETs

Alpha and Omega Semiconductor have collaboratively come up with AEC-Q101 qualified 1200V silicon carbide (SiC) αSiC MOSFETs, AOM033V120X2Q in an optimized TO-247-4L package. These new automotive-grade αSiC MOSFETs have been specifically designed to reduce the system’s size and weight while increasing range and enabling significantly faster-charging speeds. The devices provide low on-resistance with a standard gate drive of 15V and are intended to meet the high efficiency and reliability requirements of electric vehicle onboard chargers, motor drive inverters, and off-board charging stations.

The AOM033V120X2Q MOSFET is based on the company's second-generation αSiC MOSFET platform.  Unlike the standard 3 lead packages, it uses an additional sense lead to reduce the package inductance effects. The device can operate at a higher switching frequency with up to 75% reduction in switching losses compared to standard packaging. Moreover, these αSiC MOSFETs have a very low increase in on-resistance up to the rated 175° C to minimize power losses and further increase efficiency.

All in all, these MOSFETs provide designers the next-generation semiconductor technology to increase the efficiency targets in electric vehicles. The AOM033V120X2Q MOSFETs are available for production quantities and the company plans to expand the automotive αSiC MOSFET portfolio later this year to include a broader range of on-resistance and additional package options.

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