SiC MOSFET
|
Nexperia Expands SiC MOSFET Portfolio with D2PAK-7 Packaging Nexperia has introduced its latest innovation in power electronics, announcing the availability of 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging. With RDS (on) values ranging from 30 to 80 mΩ, this release marks a significant expansion of Nexperia's SiC MOSFET portfolio. Following the introduction of SiC MOSFETs in TO-247… |
|
Infineon Expands CoolSiC™ MOSFET Family with 650V TOLL Portfolio for Enhanced Thermal Performance and Power Density Infineon Technologies AG introduces its latest innovation, the silicon carbide (SiC) CoolSiC™ MOSFET 650V in TO leadless (TOLL) packaging, to address the growing demand for energy-efficient power solutions amid the rise of digitalization, urbanization, and electro-mobility. Designed to optimize energy efficiency and reliability, the new… |
|
Renesas Introduces High-Voltage Gate Driver IC for EV Inverters with Improved Isolation and CMTI Performance Renesas Electronics Corporation has developed a new gate driver IC for high-voltage power devices such as IGBTs and SiC MOSFETs in electric vehicle (EV) inverters. The RAJ2930004AGM is designed to accommodate the higher voltages of EV batteries, and has the following key features: Isolation capabilities:… |
|
3.3 kV SiC Power Devices extend designers’ Options for High-Voltage Power Electronics in Transportation and Industrial systems Microchip Technology Inc. has announced the expansion of its SiC portfolio with the release of the lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFETs and highest current-rated SiC SBDs designed to develop smaller, lighter, and more efficient solutions for electrified transportation, renewable energy, aerospace, and industrial applications. These new levels of… |
|
Lucid chose ROHM SiC MOSFETs for Efficient On-Board Charging of New Revolutionary Electric Vehicle ROHM Semiconductor has announced that Lucid will be using its silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) in the ground-breaking Lucid Air that is a state-of-the-art luxury sedan with a California-inspired design underpinned by race-proven technology. The Wunderbox which is the main on-board charging unit in the Lucid Air integrates a… |
|
New Power Semiconductors with CoolSiC MOSFET Tailored Specifically to the Requirements of Rail Services Infineon Technologies AG has announced the launch of its new power semiconductors with CoolSiC MOSFET and .XT technology in the XHP 2 package tailored specifically to the requirements of rail services. In this XHP 2 power module, CoolSiC MOSFET chips enable low conversion losses while maintaining high reliability and are the basis for increased energy efficiency and are… |
|
High-Performance Full Silicon Carbide MOSFET Module Solutions for Charging Electric Vehicles Enhancing the range of products suitable for the EV market, On Semiconductor has released a pair of new 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules. Configured as a 2-PACK half-bridge, the NXH010P120MNF1 module is a 10 mohm module that comes housed in an F1 package and the NXH006P120MNF2 module is a 6 mohm module that comes in an F2 package.… |
|
Galvanically Isolated 4A Gate Driver for Safe Control of Silicon Carbide (SiC) MOSFETs STGAP2SiCS from STMicroelectronics is a highly optimized galvanically isolated gate driver that operates from a high-voltage rail up to 1200V and ensures safe control of Silicon Carbide (SiC) MOSFETs. Housed in a wide-body SO-8W package that ensures 8mm creepage within a compact footprint, the STGAP2SiCS is loaded with smart features. The… |
|
1200V αSiC MOSFETs to Meet High Efficiency and Reliability Requirements of Electric Vehicle Applications Alpha and Omega Semiconductor have collaboratively come up with AEC-Q101 qualified 1200V silicon carbide (SiC) αSiC MOSFETs, AOM033V120X2Q in an optimized TO-247-4L package. These new automotive-grade αSiC MOSFETs have been specifically designed to reduce the system’s size and weight while increasing range and enabling significantly faster-charging speeds. The devices… |
|
Silicon Carbide MOSFET Module Released for Higher Efficiency and Miniaturization of Industrial Equipment MG800FXF2YMS3, a silicon carbide (SiC) MOSFET module from Toshiba Electronic Devices integrates newly developed dual-channel SiC MOSFET chips with 3300V and 800A rating for industrial applications. These new SiC MOSFET modules contribute to the high efficiency and miniaturization of industrial equipment. The product adopts an iXPLV (intelligent… |
|
High Performing 650V SiC MOSFETs for Superior Switching and Improved Reliability in Automotive and Industrial Applications The new silicon carbide (SiC) MOSFETs from On Semiconductor deliver high switching, improved reliability, and improved power density in various industrial and automotive applications. The NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1, and NTH4L015N065SC1 automotive AECQ101 and industrial-grade qualified 650 volt (V) SiC MOSFETs come in D2PAK7L and To247 packages and… |
|
Third-Generation 1200V SiC MOSFETs to Improve Efficiency and Ultra-Fast Switching Speeds in Industrial and Automotive Applications GeneSiC Semiconductor’s new third-generation 1200V G3R SiC MOSFETs with low on-state resistance and best figure-of-merits can surpass its currently available options in terms of performance, robustness, and quality to harness extremely high levels of efficiency and system reliability in automotive and industrial applications. Faster switching frequency, increased power… |
