Renesas Electronics Corporation has developed a new gate driver IC for high-voltage power devices such as IGBTs and SiC MOSFETs in electric vehicle (EV) inverters. The RAJ2930004AGM is designed to accommodate the higher voltages of EV batteries, and has the following key features:
- Isolation capabilities: Withstand voltage of 3.75kVrms and CMTI (Common Mode Transient Immunity) of 150V/ns
- Gate drive capabilities: Output peak current of 10A
- Protection and fault detection functions: On-chip active Miller clamp, soft turn-off, overcurrent protection (DESAT protection), under voltage lockout (UVLO), and fault feedback
- Operating temperature range: -40 to 125°C (Tj:150°C max.)
Gate driver ICs are essential components in EV inverters as they provide an interface between the inverter control MCU and the IGBTs and SiC MOSFETs, allowing for rapid turning on and off of power devices in the high-voltage domain. The RAJ2930004AGM can be used with both Renesas IGBTs and IGBTs and SiC MOSFETs from other manufacturers, and is suitable for a wide range of applications such as traction inverters, on-board chargers, and DC/DC converters.
The RAJ2930004AGM is available in sample quantities, with mass production scheduled for Q1 2024. The company also plans to release a version of its xEV Inverter Kit solution incorporating the new gate driver IC in the first half of 2023 to help developers bring their products to market quickly.