The new silicon carbide (SiC) MOSFETs from On Semiconductor deliver high switching, improved reliability, and improved power density in various industrial and automotive applications. The NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1, and NTH4L015N065SC1 automotive AECQ101 and industrial-grade qualified 650 volt (V) SiC MOSFETs come in D2PAK7L and To247 packages and offer low Rdson(12 mOhm).
Replacing existing silicon switching technologies with these new 650V SiC MOSFETs, designers will be able to achieve high performance in various applications like electric vehicles (EV) on-board chargers (OBC), solar inverters, server power supply units (PSU), telecoms, and uninterruptible power supplies (UPS) and more.
These devices are based upon a new wide bandgap material that provides high switching performance and improved thermals compared to silicon. These SiC MOSFETs employ a novel active cell design combined with advanced thin wafer technology enabling best-in-class figure of merit Rsp (Rdson*area) for 650 V breakdown voltage.
Features of Silicon Carbide (SiC) MOSFETs
- Industrial grade qualified 650 volt (V) SiC MOSFETs
- Available in D2PAK7L and To247 packages
- Automotive AECQ101 qualified
- Low Rdson(12 mOhm)
The enhanced performance of these MOSFETs delivers lower losses that enhance efficiency and reduce thermal management needs as well as reducing EMI. The new devices are all surface mount and are available in industry-standard package types including TO247 and D2PAK.