Power
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650V Super Junction Power MOSFETs in TOLL (TO-leadless) Package to Improve Efficiency of High Current Equipment Toshiba has released five new 650V super-junction power MOSFETs TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z, and TK190U65Z in… |
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CoolGan 600V e-mode HEMT for Increased Efficiency and Reliability in Telecom Power Applications The CoolGaN 600V e-mode HEMT from Infineon Technologies ensures to deliver high efficiency and reliability in telecom power… |
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650V CoolSic Hybrid Discrete for Improved Efficiency and Reliability in Automotive Applications Infineon’s 650 V CoolSiC Hybrid Discrete is a high-performing, reliable, and cost-efficient device specifically designed for… |
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1200V αSiC MOSFETs to Meet High Efficiency and Reliability Requirements of Electric Vehicle Applications Alpha and Omega Semiconductor have collaboratively come up with AEC-Q101 qualified 1200V silicon carbide (SiC) αSiC MOSFETs,… |
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Compact LDO Regulators Offer High Ripple Rejection Ratio for Enhanced Power Stabilization in Smartphones and Wearable Devices The new TCR5RG series of 45 LDO regulators from Toshiba is housed in a thin and compact WCSP4F package and offers a high ripple… |
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Silicon Carbide MOSFET Module Released for Higher Efficiency and Miniaturization of Industrial Equipment MG800FXF2YMS3, a silicon carbide (SiC) MOSFET module from Toshiba Electronic Devices integrates newly developed dual-channel… |
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Single-Ended Primary Inductor (SEPIC) Converter Design with XL6009 In the field of DC-DC Converters, A single-ended primary-inductor converter or SEPIC converter is a type of converter that uses… |
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Radiation-Hardened DC to DC Power Converters with COTS Technology to Maximize System Performance and Reliability in Space Applications Microchip’s SA50-120 series is the family of space-qualified COTS-based radiation-hardened DC to DC power converters that… |
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Ultra-Low IQ PMIC to Power NXP iMX8M Nano for High Performance in Embedded Artists Industrial Control Boards ROHM Semiconductor has recently announced that Embedded Artists is using their highly integrated PMIC, BD71847AMWV along… |
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Third-Generation 1200V SiC MOSFETs to Improve Efficiency and Ultra-Fast Switching Speeds in Industrial and Automotive Applications GeneSiC Semiconductor’s new third-generation 1200V G3R SiC MOSFETs with low on-state resistance and best figure-of-merits can… |