24 V Dual-Channel Low-Side Gate Driver with High Current for Driving Large Power Switches

Published  January 27, 2021   0
EiceDRIVER 2ED24427N01F Gate Driver

EiceDRIVER 2ED24427N01F from Infineon Technologies is a newly introduced 24 V dual-channel low-side non-inverting gate driver that enables higher power and faster switching frequencies in multiple applications with a reduced PCB footprint and increased reliability by simplifying high power density system design. Available in a DSO-8 package with a thermally efficient and exposed power pad, this new device provides a symmetrical output stage with 10 A source and sink drive capability with integrated under-voltage lockout (UVLO) protection and logic level enable control. 

The EiceDRIVER 2ED24427N01F gate driver offers 55 ns propagation delays and 450 mΩ (max) source and sink ON resistance per channel and enables high switching frequencies with reduced switching losses of the power transistors. The integrated thermal pad offers very low thermal resistance to enable reliable operation at lower temperatures under high current conditions or at higher switching frequencies.

Key Features of EiceDRIVER 2ED24427N01F

  • 10 A sink and 10 A source driver capability (typical)
  • 11.5 V under-voltage lockout
  • 24 V maximum supply voltage
  • Enable function
  • CMOS Schmitt-triggered inputs
  • Output in phase with the input
  • 3.3 V, 5 V, and 15 V input logic compatible
  • PSOIC-8 package with a thermal pad
  • 2 kV HBM ESD

The device is suitable for applications with higher switching frequencies such as power factor correction and synchronous rectification. It can also be used as a transformer driver or a buffer driver for parallel MOSFET applications or high-current IGBT modules such as EasyPACK and EconoPACK.  It is rated for industrial temperature grade operation and can be ordered from the company website.