MOSFET
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OptiMOS 6 Power MOSFET 100V Technology with Low On-State Resistance for High Switching Frequency Applications Infineon Technologies AG has introduced the OptiMOS 6 100V family of MOSFETs that comes with improved R DS(on) and combines the benefits of low on-state resistance and superior switching performances. This new technology is specifically optimized for high switching frequency applications such as telecom and solar. Moreover, with wider safe… |
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New Space-Saving Isolated SiC Gate Driver for Reliable Performance with Accurate PWM control STMicroelectronics has released a single-channel gate driver, STGAP2SiCSN optimized to simplify design, save space, and enhance robustness and reliability in energy-conscious power systems, drives, and controls. Housed in space-saving narrow-body 5mm x 4mm-wide SO-8N package, the device is capable of controlling silicon-carbide MOSFETs and feature galvanic… |
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1-Cell Li-ion Battery Protection IC with Built-in Driver for High-side Nch FETs and Temperature Protection RICOH has introduced R5445 Series of 1-Cell Li-ion battery protection IC with built-in driver for high-side Nch FETs and temperature protection. This new IC serves as Li+ / Li- polymer protector of overcharge, over discharge, and over current for battery pack. The R5445 Series IC can drive external high-side Nch MOSFETs and provide high-accuracy… |
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New Highly Integrated Half-Bridge Solution with Intelligent Slew-Rate Control for Wireless Charger Application Alpha and Omega Semiconductor Limited has announced a new family of Coil Drivers with the initial product “AOZ32033AQI” which is an integrated half-bridge gate driver capable of driving high-side and low-side N-channel MOSFETs. It offers 30V, 11mOhm in a QFN3x3 package and is ideally suited to the design of Wireless Charging TX circuits used in cordless power tools, vacuum… |
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2W Bipolar Output Surface mount DC-DC Converters for High-Voltage Gate Driver Applications Murata has released MGJ2 series, a new line of surface mount DC-DC converters as part of its MGJ2 series for high-voltage gate driver applications. The series comprises of six low-profile form factor compact modules with 2W power ratings measuring just 19.49mm x 14.99mm x 4.39mm. Available in 12 V and 15 V voltage rails, these new modules feature +15V/-5V, +15V/-9V, and… |
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New T-configuration MOSFET Relay Modules with 1 pA Low Leakage Current OMRON Electronic Components Europe has introduced new high voltage and high current versions of its T-configuration MOSFET relay modules. The new G3VM T-modules with mechanical and MOSFET relay technology provide an accurate, compact, and long-lasting switching solution with no mechanical contacts. The new OMRON G3VM-61MT and G3VM-101MT join high… |
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Smart Protection Switches with Ideal Diode True Reverse Current Blocking for Type-C PD Applications Alpha and Omega Semiconductor has introduced new high voltage sink protection switches, AOZ13984DI-02 and AOZ13987DI-02 in single small thermally enhanced 3mm x 3mm DFN package. These smart protection switches feature Ideal Diode True Reverse Current Blocking (IDTRCB), allowing no reverse current at any conditions. They also feature 28V absolute maximum voltage with startup… |
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Fully Integrated 3-Phase MOSFET Gate Driver Optimized for BLDC Motor Drives TRINAMIC which is the part of Maxim Integrated has released a fully integrated TMC6140-LA three-phase MOSFET gate driver that simplifies design and maximizes battery life of brushless direct current (DC) motor drives. This high-performance device integrates three bottom shunt amplifiers to provide a complete motor drive solution with improved power efficiency.… |
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Microchip Releases 1700V Rugged Silicon Carbide Power Modules as Smart Alternative to Silicon IGBTs Microchip Technology has expanded its silicon carbide portfolio with high-efficiency, high-reliability 1700V silicon carbide MOSFET die, discrete and power modules. The new 1700V silicon carbide technology is smart alternative to silicon IGBTs and unlike previous technology doesn’t ask designers to compromise on performance and eliminates the need to use complicated… |
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Radiation-Hardened MOSFET that can Withstand Extreme Space Environments and Extend Reliability of Power Circuitry Microchip Technology has released radiation-hardened 250V, 0.21 Ohm Rds(on), metal–oxide–semiconductor field-effect transistor (MOSFET), M6 MRH25N12U3 that can meet the requirements of space applications to withstand extreme particle interactions and solar and electromagnetic events. Suitable for commercial aerospace and defense space applications, the radiation-… |
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High-Performance Full Silicon Carbide MOSFET Module Solutions for Charging Electric Vehicles Enhancing the range of products suitable for the EV market, On Semiconductor has released a pair of new 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules. Configured as a 2-PACK half-bridge, the NXH010P120MNF1 module is a 10 mohm module that comes housed in an F1 package and the NXH006P120MNF2 module is a 6 mohm module that comes in an F2 package.… |
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New High-Voltage Superjunction MOSFETs Deliver High Performance in Low-frequency Static Switching Applications Infineon Technologies has enhanced its 600 V CoolMOS S7 family by adding two new optimized devices, industrial-grade CoolMOS S7 10 mΩ, and the automotive-grade CoolMOS S7A. Developed by optimizing the renowned CoolMOS 7 technology platform, these devices offer the best price-performance ratio at high-quality standards with emphasis on conduction performance, energy… |
