New High-Voltage Superjunction MOSFETs Deliver High Performance in Low-frequency Static Switching Applications

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ByRajni Setia 0

600 V CoolMOS S7 High-Voltage Superjunction MOSFETs

Infineon Technologies has enhanced its 600 V CoolMOS S7 family by adding two new optimized devices, industrial-grade CoolMOS S7 10 mΩ, and the automotive-grade CoolMOS S7A. Developed by optimizing the renowned CoolMOS 7 technology platform, these devices offer the best price-performance ratio at high-quality standards with emphasis on conduction performance, energy efficiency, power density, and improved thermal resistance.

Out of the two devices, the CoolMOS S7 10 mΩ has a unique low on-resistance (R DS(on)) for 600 V super junction MOSFETs and is ideal for applications where minimal conduction losses are critical like off-the-shelf solid-state relays (SSR).  The second device which is an automotive-grade CoolMOS S7A ensures system performance requirements set by solid-state circuit breakers (SSCB) and diode paralleling/replacement for high power/performance designs in automotive applications like High Voltage (HV) eFUSE, HV eDisconnect battery disconnect switch, and on-board chargers.

Both CoolMOS S7 10 mΩ and CoolMOS S7A chips that are now the part of 600 V CoolMOS S7 family come with the low R DS(on) in the market and best R DS(on) x A x cost. These devices have been integrated into an innovative top-side cooled (TSC) QDPAK SMD package, which offers excellent thermal behavior.

Moreover, a 94% reduction of height can be achieved by moving from THD to a surface-mounted device with QDPAK enabling higher power density solutions. The low conduction losses of the devices enable designers to limit the size of heat sinks up to 80% and extend the current and voltage ratings without altering the form factor. The new devices in the 600 V CoolMOS S7 family are available for order in the TSC QDPAK package (HDSOP-22-1) from the company website.

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