Microchip Technology has released radiation-hardened 250V, 0.21 Ohm Rds(on), metal–oxide–semiconductor field-effect transistor (MOSFET), M6 MRH25N12U3 that can meet the requirements of space applications to withstand extreme particle interactions and solar and electromagnetic events. Suitable for commercial aerospace and defense space applications, the radiation-hardened M6 MRH25N12U3 MOSFET provides the primary switching element in power conversion circuits including point-of-load converters, DC-DC converters, motor drives, and controls, and general-purpose switching.
Besides being able to withstand harsh environments of space, this new MOSFET ensures to extend the reliability of power circuitry and meet all requirements of MIL-PRF19500/746 with enhanced performance. This new MOSFET is designed for future satellite system designs and as an alternate source in existing systems. The device can withstand total ionizing dose (TID) up to 100 krad and 300 krad and single event effects (SEE) with linear energy transfer (LET) up to 87 MeV/mg/cm2. It provides 100-percent wafer lot radiation hardness assurance in validation tests.
The testing of this MOSFET was done by the company for Defense Logistics Agency (DLA) review and qualification. The sourcing of this device in the U.S. military supply chain is (expected JANSR2N7593U3 certification in June 2021).
