GaN
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Infineon collaborates with NVIDIA on gallium nitride-based power conversion systems for 800 VDC AI data centers Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is advancing its collaboration with NVIDIA on 800 Volt direct current (VDC) power architectures for AI data centers. Timed with NVIDIA's GTC Berlin developer conference, the announcement centers on the high-voltage intermediate bus converter (IBC), one of the most critical and demanding conversion stages in the power delivery chain of AI data… |
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Microchip Expands Space Power Portfolio with New Radiation-Tolerant GaN Point-of-Load Converter Microchip Technology (Nasdaq: MCHP) today announces the POL-05-20S-T, a radiation-tolerant, Point-of-Load (POL) converter, designed to address the demanding power requirements of space processing applications. The new device uses Gallium Nitride (GaN) power devices to deliver up to 20A of output current with high efficiency and power density. The converter is supplied in a compact, 25g… |
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Infineon introduces RIC70115 radiation-hardened GaN HEMT driver for satellite and high-reliability space applications Munich, Germany – 15 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports… |
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Infineon CoolGaN™ BDS 40 V G3 family delivers up to 82 percent footprint reduction for portable power designs Munich, Germany – 20 May 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its CoolGaN™ BDS 40 V G3 bidirectional switch (BDS) family with two new devices, the IGK048B041S and IGK120B041S. The new additions reduce PCB footprint by up to 82 percent and cut component count in half. For engineers designing within the strict spatial constraints of modern smartphones,… |
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PI's TOPSwitchGaN Flyback ICs Make Resonant Topologies Optional at 440 W Delivering 440 W of power typically requires sophisticated resonant topologies, but Power Integrations (PI) has changed that with its TOPSwitchGaN flyback IC family, based on its PowiGaN tech and TOPSwitch architecture. These ICs featuring 800 V PowiGaN switches make designing circuits easier for engineers and often remove the need for a heat sink through cooler operation. Gallium… |
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Power Integrations’ Switcher ICs Let Engineers Pick between GaN, SiC, or Silicon - electronica India 2025 Power Integrations displayed a wide array of new tech for applications including EVs, railways, industrial power supplies, and renewable energy systems at electronica 2025. In their booth, we met with Andrew Smith, their Director of Technical Outreach and Director of Training, who walked us through some of the key highlights. The company showcased its range of switch… |
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Vishay Releases RGB LED with Independent Color Control in Compact PLCC-6 Package Vishay Intertechnology’s new VLMRGB6122 is a high-performance RGB LED designed for automotive lighting, full-color displays, and backlighting applications. It measures just 3.5 mm x 2.8 mm x 1.4 mm and comes in a PLCC-6 surface-mount package. Separate anode and cathode connections for the red, green, and blue chips allow colors to be controlled independently. Precise mixing across the full… |
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MIT Combines GaN and Silicon Chips for Faster, Efficient Electronics Researchers from MIT and elsewhere have developed a new way to combine two types of chips: gallium nitride (GaN) and silicon-based CMOS chips into a single chip. The solution is cheaper, scalable, and more energy-efficient. Gallium nitride chips are not cheap or easy to work with, but they are faster and better at handling power. Silicon chips, on the other hand, are cheap and common but lack… |
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Infineon Launches Radiation Hardened GaN Transistors Certified for Space Applications Infineon Technologies has unveiled a new family of radiation-hardened Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) fabricated using its trademark CoolGan technology. The tech was designed and manufactured at their own foundry to sustain the harsh conditions of space. These are the first internally manufactured GaN devices to receive the Defense Logistics Agency’s (DLA)… |
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Polymatech Announces Second Semiconductor Plant in Chhattisgarh Polymatech Electronics has announced the launch of its second semiconductor manufacturing plant in Atal Nagar-Nava Raipur, Chhattisgarh. The announcement was made during the Chhattisgarh Investor Connect 2024 event held in New Delhi. This new facility will focus on producing Gallium Nitride (GaN) semiconductor chips and advanced packaging for 5G and 6G telecom base… |
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Single-Chip Multi-Output Power Supply ICs Power Integrations recently introduced the InnoMux-2 family, which comprises single-stage, independently regulated multi-output offline power supply integrated circuits (ICs). These ICs streamline power conversion by integrating both AC-to-DC and downstream DC-to-DC conversion stages into a single chip. This design offers up to three independently regulated outputs,… |
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ROHM Unveils BD2311NVX-LB: Revolutionizing GaN Device Performance with Ultra-High-Speed Gate Driver ROHM introduces the BD2311NVX-LB, an ultra-high-speed gate driver IC designed to optimize the performance of Gallium Nitride (GaN) devices. This innovative IC achieves nanosecond-level gate drive speeds, a breakthrough ideal for high-speed GaN switching. The product's swift switching, with a minimum gate input pulse width of 1.25ns,… |
