Infineon Technologies has unveiled a new family of radiation-hardened Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) fabricated using its trademark CoolGan technology. The tech was designed and manufactured at their own foundry to sustain the harsh conditions of space. These are the first internally manufactured GaN devices to receive the Defense Logistics Agency’s (DLA) Joint Army Navy Space (JANS) certification, adhering to MIL-PRF-19500/794 standards.
The devices target applications like on-orbit satellites, manned space missions, and deep space exploration probes. The devices are small, light, and reliable, suiting aerospace environment needs. This was made possible by leveraging GaN’s wide bandgap semiconductor properties alongside Infineon’s extensive expertise in high-reliability power devices, allowing the transistors to deliver better thermal performance and power density.
Initial products include three variants rated at 100 V and 52 A, featuring a low typical drain-source on-resistance (R_DS(on)) of 4 mΩ and a total gate charge (Qg) of 8.8 nC. The devices are packaged in hermetically sealed ceramic surface mount cases, they offer Single Event Effect (SEE) hardening up to a linear energy transfer (LET) of 70 MeV·cm²/mg (gold ions). Two devices undergo screening for total ionizing doses (TID) of 100 krad and 500 krad without JANS certification, while the third, screened to 500 krad TID, meets the rigorous JANS qualification.
Infineon emerges as the first semiconductor company to achieve DLA JANS certification for fully in-house produced GaN power transistors. The company is currently producing multiple lots ahead of the full JAN-certified product launch planned for summer 2025. Initial variants include the IG1NT052N10R and IG1NT052N10G (COTS screened at 100 and 500 krad, respectively) and the JANSG2N7697UFHC (JANS-certified, 500 krad), with additional variants under development to expand voltage and current options. Engineering samples and evaluation boards are available at this time.
