HEMT
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Infineon Launches Radiation Hardened GaN Transistors Certified for Space Applications Infineon Technologies has unveiled a new family of radiation-hardened Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) fabricated using its trademark CoolGan technology. The tech was designed and manufactured at their own foundry to sustain the harsh conditions of space. These are the first internally manufactured GaN devices to receive the Defense Logistics Agency’s (DLA)… |
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CoolGan 600V e-mode HEMT for Increased Efficiency and Reliability in Telecom Power Applications The CoolGaN 600V e-mode HEMT from Infineon Technologies ensures to deliver high efficiency and reliability in telecom power supply systems. This new device is the key component in Delta’s DPR 3000E EnergE rectifiers and enables an energy efficiency of 98%. Encompassed in the DFN8x8 package, it offers a power density of 56.8 W/in³ and provides high performance while… |
