FET
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ROHM's New Three-Phase BLDC Gate Driver Uses TriC3 to Cut Switching Loss for Medium-Voltage Motors ROHM’s new three-phase brushless DC motor gate driver uses its proprietary TriC3™ technology to minimise FET switching loss without compromising on electromagnetic interference (EMI). It is designed for motors that run on 12 to 48V power sources, meaning that applications include electric drills, industrial fans, air conditioners, and E-bikes. The TriC3™ tech helps mitigate the usual… |
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Comparison between CMOS and TTL Logic - Which is Better and Why? It might be surprising to know that the patent for a ‘field effect transistor’ predated the creation of the bipolar transistor by at least twenty years. However, bipolar transistors were quicker to catch on commercially, with the first chip made of bipolar transistors appearing in the 1960s, with MOSFET manufacturing technology being perfected in the 1980s and soon… |
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High-Efficiency Silicon Carbide FETs with Low Drain to Source Resistance (RDS) from United SiC United SiC has introduced a new series of SiC FETs, under the new UF3C/UF3SC series. These new series provide higher switching speeds, higher efficiency, and lower losses. At the same time, they offer a drop-in replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts, which allows us to upgrade the systems for greater performance and efficiency without… |
