High-Efficiency Silicon Carbide FETs with Low Drain to Source Resistance (RDS) from United SiC

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ByDinesh Kumar 0

Silicon Carbide FETs

United SiC has introduced a new series of SiC FETs, under the new UF3C/UF3SC series. These new series provide higher switching speeds, higher efficiency, and lower losses. At the same time, they offer a drop-in replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts, which allows us to upgrade the systems for greater performance and efficiency without making the changes to the existing gate drive circuitry.

The UF3C/UF3SC series can operate at a voltage of 650V to 1200V with low RDS from 7 mΩ to 150 mΩ. They offer an excellent body diode performance (VF<2V) and can be driven with any Si and/or SiC gate drive voltage. Further, the turn-on losses can be reduced with a 50% reduction in Qrr and the FET can be used in high current applications by adding a small, low-cost RC snubber.

The New devices come with integrated ESD and gate protection and are available in full suited industry-standard packages like TO-220-3L, D2PAK-3L, DFN8X8, TO-247-3L & -4L (Kelvin). For more information about the UF3C/UF3SC series, visit the official website of the United SiC.

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