Power GaN transistors
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New 45W and 150W MasterGaN Integrated Half-Bridge Drivers for High-Efficiency Power Conversion STMicroelectronics has introduced twi new 45W and 150W MasterGaN integrated half-bridge drivers for high-efficiency power conversion. Housed in a 9mm x 9mm GQFN package optimized for high-voltage applications with 2mm creepage distance between high-voltage and low-voltage pads, the new MasterGaN3 and MasterGaN5 integrated power packages are best suited for designing… |
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MasterGaN2: 600V Half Bridge Driver with Two Enhancement Mode GaN HEMT for High-Efficiency Power Topologies STMicroelectronics has released MasterGaN2, an asymmetric half-bridge pair of power GaN transistors in a small 9mm x 9mm x 1mm GQFN package. This new device includes driver and protection circuits and delivers an integrated GaN solution suited to soft-switching and active-rectification converter topologies. The integrated power GaNs have 650 V drain-source breakdown… |
