SiC
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Power Integrations’ Switcher ICs Let Engineers Pick between GaN, SiC, or Silicon - electronica India 2025 Power Integrations displayed a wide array of new tech for applications including EVs, railways, industrial power supplies, and renewable energy systems at electronica 2025. In their booth, we met with Andrew Smith, their Director of Technical Outreach and Director of Training, who walked us through some of the key highlights. The company showcased its range of switch… |
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Infineon and ROHM Sign MoU for Compatible SiC Power Packages Infineon and ROHM have signed an MoU(Memorandum of Understanding) that lets them act as second sources for each other's customers using certain SiC products with applications including electric vehicle on-board chargers, solar photovoltaic systems, energy storage, and AI data centres. This will make both the design and procurement process easier for the customer. The standardisation of… |
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India Approves Four New Semiconductor Projects Worth ₹4,600 Crore Across Three States The Union Cabinet has approved four new semiconductor manufacturing projects under the India Semiconductor Mission (ISM). The combined investments amount to ₹4,600 crore. Proposals came from SiCSem, Continental Device India Private Limited (CDIL), 3D Glass Solutions Inc., and Advanced System in Package (ASIP) Technologies. These facilities are expected to employ 2,034 skilled… |
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Renesas Calms Fears Over Indian OSAT Project as Wolfspeed Faces Uncertainty Wolfspeed, a US-based silicon carbide (SiC) wafer maker, reported in an SEC filing that its ability to continue operations is in doubt, hinting at possible bankruptcy. Renesas Electronics of Japan has a $2 billion long-term agreement with the company for SiC wafer supply. Advance payments that have already been made towards this put Renesas at risk of financial loss. The Wolfspeed… |
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RIR Power Electronics to Establish ₹618 Crore SiC Semiconductor Plant in Odisha RIR Power Electronics Ltd has secured approval under the Odisha Semiconductor Manufacturing and Fabless Policy 2023 for a customized incentive package to establish a Silicon Carbide (SiC) semiconductor plant in Odisha. The approved investment of ₹618 Crores is aimed at advancing domestic semiconductor production while meeting growing industry demands. The facility… |
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Odisha Government Approves 50% Incentive for India’s First SiC Semiconductor Facility The Odisha Cabinet has approved a customized incentive package of 50% for RIR Power Electronics Limited to establish India’s first Silicon Carbide (SiC) semiconductor manufacturing facility in Bhubaneswar. The facility to be developed at the Electronic Manufacturing Cluster (EMC) Park in Infovalley, involves a total investment of ₹618.60 crore and will be implemented in two phases over two… |
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Infineon Technologies Inaugurated Largest SiC Power Semiconductor Fab in Malaysia Power semiconductors, especially those based on wide bandgap materials, is likely to see robust market expansion as a result of the decarbonization trend. First Phase of a new 200-millimetre Silicon Carbide (Sic) power semiconductor fab in Kulim, Malaysia was officially launched by Infineon CEO Jochen Hanebeck, along with… |
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The Roles of Digital Isolators and Optocouplers in Circuit Design Once an electrical design engineer moves beyond initial conceptual sketches and delves into the core of the circuit design, incorporating digital isolators and optocouplers quickly becomes integral to the beta design phase of the project. Digital isolators and optocouplers serve similar purposes in electronics. Both devices… |
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Gen 3 1200 V SiC Schottky Diodes Increase Efficiency and Reliability for Switching Power Designs Vishay Intertechnology has introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power… |
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Nexperia Expands SiC MOSFET Portfolio with D2PAK-7 Packaging Nexperia has introduced its latest innovation in power electronics, announcing the availability of 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging. With RDS (on) values ranging from 30 to 80 mΩ, this release marks a significant expansion of Nexperia's SiC MOSFET portfolio. Following the introduction of SiC MOSFETs in TO-247… |
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Microchip's Integrated Power Solution for Aviation Electric Actuation Systems Microchip Technology has developed a new integrated power solution tailored for the aviation industry's shift towards electric actuation systems in More Electric Aircraft (MEA). This solution combines companion gate driver boards with Microchip's Hybrid Power Drive (HPD) modules, available in silicon carbide (SiC) or silicon (Si) technology, covering a power range… |
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Infineon Expands CoolSiC™ MOSFET Family with 650V TOLL Portfolio for Enhanced Thermal Performance and Power Density Infineon Technologies AG introduces its latest innovation, the silicon carbide (SiC) CoolSiC™ MOSFET 650V in TO leadless (TOLL) packaging, to address the growing demand for energy-efficient power solutions amid the rise of digitalization, urbanization, and electro-mobility. Designed to optimize energy efficiency and reliability, the new… |
