Nexperia
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Low Clamping Bidirectional ESD Protection Device for USB4 Standard Interfaces Nexperia announced two PESD5V0R1BxSF extremely low clamping and capacitance bidirectional Electrostatic Discharge (ESD) protection diodes. Based on Treos technology with active silicon-controlled rectification, the devices ensure optimal signal integrity for USB4TM (up to 2 x 20 Gbps) data lines on laptops and peripherals, smartphones, and other portable electronic equipment… |
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Nexperia's Acquisition of UK's Largest Semiconductor Firm NWF, Put Under Review
A huge geopolitical imperativeness has been gained by the semiconductor sector because the key technology has been targeted by China for the upcoming economy
For a long time, Beijing has been targeting to gain complete control over global supply chain of semiconductor, claims British industry experts
After the China backed semiconductor manufacturer Nexperia proclaimed to… |
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Nexperia Acquires UK's Largest Semiconductor Plant to Meet Manufacturing Demands NWF has a total outstanding debt of £20 million with HSBC and £18 million with the Welsh government. Majority shareholder Drew Nelson, the CEO who acquired the business from Infineon four years back will now receive £15 million. China’s Wingtech that owns the Dutch semiconductor firm Nexperia has now announced that it… |
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Standard Logic Devices in Ultra-Compact DHXQFN Packages Nexperia has developed small and low profile 14, 16, 20, and 24 pin DHXQFN packages to provide a small footprint in standard logic devices. Measuring just 2 mm x 2 mm (14 pin), 2 mm x 2.4 mm (16 pin), 2 mm x 3.2 mm (20 pin), and 2 mm x 4 mm (24 pin), the 0.4 mm pitch, 0.45 mm height, these DHXQFN packages help in saving space on PCB. The 16 pin… |
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New Trench Schottky Rectifiers to Deliver High System Efficiency and Reduce Thermal Runaway Risk The new Trench Schottky rectifiers from Nexperia are AEC-Q101 approved devices that combine low switching losses and increased safe operating area for fast switching applications. These new components feature excellent switching behavior and leading thermal performance. Available in Nexperia’s Clip Bond FlatPower (CFP) packages that have a much smaller footprint than SMA/SMB… |
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High-Performing 4-channel ESD Protection Devices for High-Speed Interfaces in Automotive Applications The new PESD4USBx series of high-performing 4-channel ESD protection devices by Nexperia offer ideal signal integrity for automotive multimedia and video link applications. There are a total of 12 ESD protection devices in the series that aim to protect the ever-increasing number of high-speed interfaces found in automotive applications, especially the in… |
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Low-cost 80 V Resistor-Equipped Transistors to Handle Spikes and Pulses in 48-V Automotive and Higher Voltage Circuits Nexperia has released a family of space- and cost-saving 80-V resistor-equipped transistors (RETs) or digital transistors to handle spikes and pulses in 48-V automotive board net (mild hybrids and electric vehicles) and other higher voltage circuits. These new RETs can save space and reduce manufacturing costs by combining the bias resistor and bias… |
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Space Saving LED Drivers in Compact DFN Package with Side-Wettable Flanks for Automated Inspection and Improved Reliability Nexperia has released a new range of AEC-Q101-qualified LED drivers in the space-saving DFN2020D-6 (SOT1118D) package. The devices save up to 90% PCB space and feature side-wettable flanks (SWF) for automated inspection (AOI) and improved reliability. Other than this, the inclusion of side-wettable flanks enables the devices to exhibit greater resistance to shear forces and… |
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Automotive Qualified ESD Protection devices with High Signal Integrity, Low Clamping voltage, and High Surge Robustness Nexperia has introduced four new AEC-Q101-qualified TrEOS ESD protection devices for automotive use. The new TrEOS components can withstand high temperatures up to 175°C, and they combine extremely low capacitance for high signal integrity, extremely low clamping, and high robustness for modern automotive interfaces. The capacitance of the device is… |
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High Voltage GaN FET Devices in TO-247 and CCPAK SMD Package for Compact High-Efficiency Designs Nexperia has introduced a new range of GaN FET devices that consists of next-gen high-voltage Gan HEMT H2 technology in both TO-247 and CCPAK surface-mount packaging. The GaN technology employs through-epi vias for reducing defects and shrinking the die size up to 24%. The TO-247 package reduces the RDS (on) by 41mΩ (max., 35 mΩ types. at 25 °C) with high threshold… |
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New Silicon Germanium Rectifier Diodes for High Efficiency and Thermal Stability in Automotive Applications Nexperia has introduced the new range of silicon-germanium (SiGe) rectifiers with 120 V, 150 V, and 200 V reverse voltages that deliver high efficiency of their Schottky counterparts along with thermal stability of fast recovery diodes. The new devices are designed to be operated in the automotive, communication infrastructure, and server markets. … |
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Low RDS, Small Footprint P-Channel MOSFET for Space Constraint Automotive Applications Nexperia has introduced a new family 30V-60V P-channel MOSFETs in the robust, space-saving LFPAK56 (Power-SO8) package with an RDS (on) down to 10mΩ (30V). The AEC-Q101 qualified MOSFETs are suitable for automotive applications, they also act as an ideal replacement for DPAK MOSFETs and offer a reduction in footprint of 50% whilst maintaining high-performance… |
