High Voltage GaN FET Devices in TO-247 and CCPAK SMD Package for Compact High-Efficiency Designs

News

ByDinesh Kumar 0

Nexperia's GaN FET Devices

Nexperia has introduced a new range of GaN FET devices that consists of next-gen high-voltage Gan HEMT H2 technology in both TO-247 and CCPAK surface-mount packaging. The GaN technology employs through-epi vias for reducing defects and shrinking the die size up to 24%. The TO-247 package reduces the RDS (on) by 41mΩ (max., 35 mΩ types. at 25 °C) with high threshold voltage and low diode forward voltage. Whereas the CCPAK surface mount package will further reduce the RDS (on) to 39 mΩ (max., 33 mΩ typ. at 25 °C).

The device can be driven simply using standard Si MOSFET as the part is configured as cascade devices. The CCPAK surface-mount packaging adopts Nexperia’s innovative copper-clip package technology to replace internal bond wires, this also reduces the parasitic losses optimizes electrical and thermal performance and improves reliability. The CCPAK GaN FETs are available in top-or bottom cooled configuration for improved heat dissipation.

Both versions meet the demands of AEC-Q101 for automotive applications and other applications include on-board chargers, DC/DC converters and traction inverters in electric vehicles, and industrial power supplies in the 1.5-5 kW range for titanium-grade rack-mounted telecoms, 5G, and datacenters.

Get Our Weekly Newsletter!

Subscribe below to receive most popular news, articles and DIY projects from Circuit Digest

Comments

Log in or register to post Comment