GaN FET
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Renesas Expands GaN Portfolio with First Low-Voltage GaN FETs for AI Data Centers and Robotics Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, has expanded its GaN portfolio into low-voltage applications with its first family of 100V enhancement mode (E-mode) GaN-based discrete power transistors. The RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC low-voltage GaN FETs deliver ultra-fast switching speeds and… |
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Automotive GaN FET with Integrated Driver, Protection and Active Power Management can Reduce Board Space and Improve Power Density in Automotive Applications Texas Instruments has expanded its portfolio of high-voltage power management devices with the next generation of 650-V and 600-V gallium nitride (GaN) field-effect transistors (FETs). The fast-switching and 2.2-MHz integrated gate driver allows the device to deliver twice the power density, achieve 99% efficiency, and reduce the size of power magnetics by 59% compared… |
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High Voltage GaN FET Devices in TO-247 and CCPAK SMD Package for Compact High-Efficiency Designs Nexperia has introduced a new range of GaN FET devices that consists of next-gen high-voltage Gan HEMT H2 technology in both TO-247 and CCPAK surface-mount packaging. The GaN technology employs through-epi vias for reducing defects and shrinking the die size up to 24%. The TO-247 package reduces the RDS (on) by 41mΩ (max., 35 mΩ types. at 25 °C) with high threshold… |
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Ready-to-use, 600-V GaN FET power stages supports applications up to 10 kW Texas Instruments announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid… |
