MasterGaN4
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MasterGaN4 Power Devices with Two symmetrical 650V GaN Power Transistors for High-Efficiency Power Conversion up to 200 Watts Integrating two symmetrical 650V gallium nitride (GaN) power transistors with 225mΩ RDS(on), the new MasterGaN4 power device from STMicroelectronics can simplify the design of high-efficiency power-conversion applications up to 200W. This latest addition to ST’s MasterGaN family uses wide-bandgap GaN power semiconductors by taking away the complex gate-control and circuit-… |
