GaN Transistor
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Renesas Expands GaN Portfolio with First Low-Voltage GaN FETs for AI Data Centers and Robotics Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, has expanded its GaN portfolio into low-voltage applications with its first family of 100V enhancement mode (E-mode) GaN-based discrete power transistors. The RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC low-voltage GaN FETs deliver ultra-fast switching speeds and… |
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SounDigital Boosts Audio Performance with Infineon’s CoolGaN Technology in New 1500W Class D Amplifier SounDigital, known for its high-performance audio amplifiers, has integrated Infineon’s CoolGaN transistors into its new 1500 W Class D amplifier. This upgrade makes the amplifier more energy-efficient, compact, and powerful, while also improving sound quality. SoundDigitals uses Infineon’s enhanced Gallium Nitride (GaN) transistors… |
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India to Launch First Made-in-India Chip by September-October 2025, Says Ashwini Vaishnaw India is set to introduce its first made-in-India chip from a commercial semiconductor fab as announced by IT Minister Ashwini Vaishnaw. The chip is expected to be launched in September or October, marking a significant step in the country’s semiconductor industry. Tata Electronics in partnership with Powerchip Semiconductor Manufacturing Corporation is building the… |
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Next Generation CoolGaN Transistor Families Deliver High Power Density in Automotive Applications Infineon Technologies AG has announced two new generations of high voltage (HV) and medium voltage (MV) CoolGaN TM devices which now enable customers to use Gallium Nitride (GaN) in voltage classes from 40 V to 700 V in a broader array of applications that help drive digitalization and decarbonization. With this, Infineon expanded its CoolGaN… |
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MasterGaN4 Power Devices with Two symmetrical 650V GaN Power Transistors for High-Efficiency Power Conversion up to 200 Watts Integrating two symmetrical 650V gallium nitride (GaN) power transistors with 225mΩ RDS(on), the new MasterGaN4 power device from STMicroelectronics can simplify the design of high-efficiency power-conversion applications up to 200W. This latest addition to ST’s MasterGaN family uses wide-bandgap GaN power semiconductors by taking away the complex gate-control and circuit-… |
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STMicroelectronics Extends MasterGaN Family with New Device Optimized for Asymmetrical Topologies Building upon the advantages of the STMicroelectronics MasterGaN platform, MasterGaN2 is the first in the new family to contain two asymmetric gallium-nitride (GaN) transistors, delivering an integrated GaN solution suited to soft-switching and active-rectification converter topologies. The 650V normally-off … |
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STMicroelectronics Pioneers Smaller and Faster Chargers and Power Supplies by Integrating Si Driver and GaN Transistor in Single Package
World’s first solution to integrate Si driver and GaN power transistors in one package
Enables chargers and adapters 80% smaller and 70% lighter, while charging 3 times faster compared to ordinary silicon-based solutions
STMicroelectronics has introduced a platform embedding a half-bridge driver based on silicon technology along with a pair of gallium-nitride (GaN)… |
