Next-Generation Superjunction Power MOSFETs

Toshiba Announce Next-Generation Superjunction Power MOSFETs

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Next-Generation Superjunction Power MOSFETs

A new series of next-generation 650V power MOSFETs was announced by Toshiba, that are intended to be used in server power supplies in data centers, solar (PV) power conditioners, uninterruptible power systems (UPS) and other industrial applications.

 

The first power MOSFET in the DTMOS VI series is the 650V TK040N65Z which supports continuous drain currents (ID) up to 57A and 228A when pulsed (IDP). To decrease losses in power applications, it provides an ultra-low drain-source on-resistance RDS(ON) of 0.04Ω (0.033Ω typ.) making it suitable for use in modern high-speed power supplies, due to the reduced capacitance in the design.

 

The reductions in the key performance index / figure-of-merit (FoM) – RDS(ON) x Qgd improves the power efficiency in applications. The TK040N65Z shows a 40% improvement in this important metric over the previous DTMOS IV-H device, which shows a significant gain in power supply efficiency in the region of 0.36% - as measured in a 2.5kW PFC circuit.

 

Applications

  • Date centers (Server power supplies, etc.)
  • Power conditioners for photovoltaic generators
  • Uninterruptible power systems

 

Features

  • Lower RDS(ON) × Qgd allows switching power supplies to improve the efficiency

 

Main Specifications (@Ta=25℃)

Part number

TK040N65Z

Package

TO-247

Absolute
maximum ratings

Drain-source voltage VDSS (V)

650

Drain current (DC) ID (A)

57

Drain-source On-resistance RDS(ON) max @VGS= 10V (Ω)

0.040

Total gate charge Qg typ. (nC)

105

Gate-drain charge Qgd typ. (nC)

27

Input capacitance Ciss typ. (pF)

6250

Previous series (DTMOS Ⅳ-H) part number

TK62N60X

 

The TK040N65Z is available in an industry-standard TO-247 package which ensures compatibility with legacy designs as well as suitability for new projects. It enters mass production today and shipments begin immediately.

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