Infineon Technologies introduce a new 1200V IGBT generation TRENCHSTOP™ IGBT6. Manufactured on 12 inch wafer size, the new IGBT technology is designed to address the increasing customer requirements for high efficiency and high power density. It was optimized for use in hard switching and resonant topologies operating at switching frequencies from 15 kHz to 40 kHz, intended to be used in applications such as uninterruptible power supply (UPS), solar inverters, battery chargers, and energy storage.
The 1200V TRENCHSTOP IGBT6 is released in two families, the S6 series features the best trade-off between a low saturation voltage of V CE(sat) of 1.85V and low switching losses. The H6 series is optimized for low switching losses. Application tests confirm that replacing the predecessor Highspeed3 IGBT with the new IGBT6 S6 series improves the efficiency by 0.2 percent. The positive temperature coefficient allows easy and reliable device paralleling, along with a good R g controllability permits adjusting the switching speed of the IGBT according to the need of the application.
Currently the IGBT6 families are in volume production. The product portfolio comprises 15A and 40A co-packed with a half- or full-rated freewheeling diode in a TO-247-3 package. A current density for a discrete IGBT is delivered by the 75 A variant co-packed with a 75 A freewheeling diode in TO-247PLUS 3pin or 4pin package.