80V N-Channel Power MOSFET with Low Drain-to-Source Resistance for Improved Power Efficiency

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ByDinesh Kumar 0

TPH2R408QM and TPN19008QM Power MOSFET

Toshiba Electronic Devices & Storage Corporation has extended its U-MOS X-H series with the new 80V N-channel power MOSFETs that are designed with the latest generation process. The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package.

The new 80V U-MOS X-H products have 40% lower drain-source on-resistance when compared with the current generation. They also have an improved trade-off between the drain-source on-resistance and the gate charge characteristics because of the optimized device structure.

Features of TPH2R408QM and TPN19008QM

Parameter

TPH2R408QM

TPN19008QM

Drain Source Voltage (Vds)

80V

80V

Drain Current

120A

120A

On-Resistance @ Vgs = 6V

3.5 mΩ

28 mΩ

Gate switch Charge

28nC

5.5nC

Input Capacitance

5870pF

1020pF

Package

SOP

TSON

With the lowest power dissipation, these new MOSFETs are suitable for switching power supplies in industrial equipment such as High-efficiency AC-DC converters, DC-DC converters, etc. that are used in centers and communication base stations and also in motor control equipment. For more information about TPH2R408QM and TPN19008QM, visit the product page.

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