ROHM’s SiC Devices Reflected 20 Years of R&D at electronica India 2025

Published  November 5, 2025   0
User Avatar Abhishek
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ROHM's Booth at electronica India 2025

ROHM Semiconductor was among the key players that exhibited at electronica India 2025. The company’s Group Manager - Technical Centre, Balaji Karthic, while giving us an overview, called attention to their near two decades of research and development in SiC (silicon carbide) that led to their fifth-generation devices. The company’s offerings go from wafers to discretes to modules, and their manufacturing capability has extended from 6-inch to 8-inch wafers. The company’s booth primarily presented SiC products, highlighting different packages and applications.


Their display included TO-247-4L packages with top-side cooling for discrete devices, and specialized modules for electric vehicle traction inverters. When asked to expand on what the fifth generation of devices meant, Balaji stated that these new SiC products achieve a 30% reduction in RDS(on) compared to their predecessors, making it possible to reach the same power rating with a smaller die. He noted that the company’s SiC tech supports a wide range of energy-efficient and power-saving applications and mentioned how high-power PV inverters have started adopting their SiC technology.

ROHM’s emphasis on advanced package design connects to their recent partnership with Infineon. The collaboration allows the companies to share packaging technologies, and as a result, gives the customers more sourcing flexibility. ROHM will make use of Infineon’s top-side cooling platforms, while their partner will develop using ROHM's DOT-247 design. The company's R&D advances and partnership efforts to improve efficiency show promising potential for the future of sustainable power solutions.

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