Schottky Barrier Diodes
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3.3 kV SiC Power Devices extend designers’ Options for High-Voltage Power Electronics in Transportation and Industrial systems Microchip Technology Inc. has announced the expansion of its SiC portfolio with the release of the lowest on-resistance [RDS(on)] 3.3 kV SiC MOSFETs and highest current-rated SiC SBDs designed to develop smaller, lighter, and more efficient solutions for electrified transportation, renewable energy, aerospace, and industrial applications. These new levels of… |
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650V CoolSic Hybrid Discrete for Improved Efficiency and Reliability in Automotive Applications Infineon’s 650 V CoolSiC Hybrid Discrete is a high-performing, reliable, and cost-efficient device specifically designed for automotive purposes. Comprising of 50 A TRENCHSTOP 5 fast-switching IGBT and a CoolSiC Schottky diode, this new device builds a perfect cost-performance trade-off for hard-switching topologies and supports high system integrity in addition to bi-… |
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AEC-Q101 Qualified 700 and 1200V Silicon Carbide (SiC) Schottky Barrier Diodes for High System Efficiency and Reliability in Electric Vehicles Microchip Technology aims to provide automotive solutions to help designers and developers in easy transition to SiC while minimizing the risk of quality, supply, and support challenges. With this aim in mind, the company is here with yet another smart device that caters to the needs of the automotive industry. The company has released the AEC-Q101-… |
