The Infineon Technologies AG has introduced the industry-leading TRENCHSTOP IGBT7 in a discrete TO-247 Housing with a breakdown voltage of 650V. The TRENCHSTOP family portfolio is available with the current ratings of 20A, 30A, 40A, 50A, and 75A, hence they are suitable for applications such as industrial motor drives, power factor correction, photovoltaic and uninterruptible power supplies.
The TRENCHSTOP IGBT7 chip has been designed based on the new micro-pattern trench technology and provides much lower static losses and 10% less on-state voltage for the same current class. The new device has a very low saturation voltage (VCE (sat)) and is co-packed with an emitter controlled 7th generation (EC7) diode, which provides for a 150 mV lower forward voltage (VF) drop and improved reverse-recovery softness.
With the Short circuit robustness, the TRENCHSTOP IGBT7 offers superior controllability and excellent EMI performance, it can be easily adjusted to provide the required dv/dt and switching losses. The device has been proven to provide the ruggedness required in high humidity industrial applications by passing the JEDEC based HV-H3TRB (High Voltage High Humidity High-Temperature Reverse Bias).
