High-Speed 200V Gate Drivers in SO-8 Package by Diode Incorporated


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DI released High-Speed 200V Gate Drivers in an SO-8 Package

Diodes Incorporated today launched Half bridge and High-side/Low-side topology Gate driver in an SO-8 package. These gate drivers will focus on High-voltage, High-speed applications for converters, inverters, motor control and Class-D power amplifier applications. These devices will offer junction isolated level-shift technology to create a floating channel high-side driver for use in a bootstrap topology operating up to 200V. Also it has ability to drive two channel MOSFETs in half bridge configuration. In addition to this, all devices will feature standard TTL/CMOS logic inputs with Schmitt triggering and will operate down to 3.3V.


The three DGD2003S8, DGD2005S8, and DGD2012S8 will be suitable for motor drive applications up to 100V. The device will be well suited for simultaneous support for power conversion and inversion applications operating at 200V. The outputs of these devices will be able to withstand negative transient and will include undervoltage lock-out for high-side and low-side drivers. These feature makes it suitable for applications in number of consumer and industrial designs including power tools, robotics, small vehicles and drones.


With power efficiency maintained across the range, the feature include a source and sink current of 290mA and 600mA, respectively for the DGD2003S8 and DGD2005S8 and 1.9A and 2.3A respectively for the DGD2012S8. The DGD2005S8 has a maximum propagation time of 30ns when switching between high-side and low-side whereas the DGD2003S8 features a fixed internal deadtime of 420ns. The temperature range is rated to work from -400C to +1250C.

The DGD2003S8, DGD2005S8 and DGD2012S8 are available in the SO-8 packages.

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