STMicroelectronics has introduced two new dual-channel gate drivers STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs that leverage galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. The target applications of these devices include power supplies, drives, inverters, welders, and chargers.
These devices can deliver can deliver a powerful gate-control signal of up to 4A, with dual output pins for extra flexibility in gate driving, allowing independent adjustment of turn-on and turn-off times. Both drivers are rated for voltages up to 1200V on the high-voltage rail and have input-to-output propagation time of 75ns with high PWM accuracy. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions.
Key Features
- High voltage rail up to 1200 V
- Driver current capability: 4 A sink/source @ 25 °C
- dV/dt transient immunity ±100 V/ns
- Overall input-output propagation delay: 75 ns
- Separate sink and source option for easy gate driving configuration
- 4 A Miller CLAMP
- UVLO function
- Configurable interlocking function
- Dedicated SD and BRAKE pins
- Gate driving voltage up to 26 V
Moreover, Circuit protection features include thermal protection, a watchdog for safe operation, and Under-Voltage Lockout (UVLO) per channel to prevent starting-up in a dangerous low-efficiency mode.
