Galvanically Isolated Dual Gate Drivers Optimize and Simplify SiC and IGBT Switching Circuits

Published  February 1, 2022   0
L Lakshita
Galvanically Isolated Dual Gate Drivers STGAP2HD and STGAP2SICD

STMicroelectronics has introduced two new dual-channel gate drivers STGAP2HD for IGBTs and STGAP2SICD for SiC MOSFETs that leverage galvanic-isolation technology to provide 6kV transient-voltage capability in a SO-36W wide-body package. The target applications of these devices include power supplies, drives, inverters, welders, and chargers.

These devices can deliver can deliver a powerful gate-control signal of up to 4A, with dual output pins for extra flexibility in gate driving, allowing independent adjustment of turn-on and turn-off times. Both drivers are rated for voltages up to 1200V on the high-voltage rail and have input-to-output propagation time of 75ns with high PWM accuracy. In addition, ±100V/ns dv/dt transient immunity prevents spurious turn-on in electrically noisy operating conditions. 

Key Features

  • High voltage rail up to 1200 V
  • Driver current capability: 4 A sink/source @ 25 °C
  • dV/dt transient immunity ±100 V/ns
  • Overall input-output propagation delay: 75 ns
  • Separate sink and source option for easy gate driving configuration
  • 4 A Miller CLAMP
  • UVLO function
  • Configurable interlocking function
  • Dedicated SD and BRAKE pins
  • Gate driving voltage up to 26 V

Moreover, Circuit protection features include thermal protection, a watchdog for safe operation, and Under-Voltage Lockout (UVLO) per channel to prevent starting-up in a dangerous low-efficiency mode.