Targeting to increase the power density and efficiency in various power supply circuits, Vishay Intertechnology has introduced its new SiSF20DN common-drain dual n-channel 60V MOSFET. This IC comes within a compact 1212-8SCD thermally enhanced PowerPAK package. The company claims that its device is featured to provide Rs-s (ON) down to 10mΩ at 10 volts with a 3 mm by 3 mm footprint. This IC’s targeted application ensures to increase the power density and efficiency in battery management systems, plug-in and wireless chargers, DC/DC converters, powerless chargers, etc.
Features of SiSF20DN N-Channel MOSFET:
- Common drain configuration with N-channel
- Drain Source Voltage (VDS) = 60V
- Gate Source Voltage (VGS) = 20V
- Drain Source Resistance (RDS ) = 0.0065 at 10V
- Maximum Output Power (PD max) = 69.4W
- Maximum Drain Current (ID) = 52A
- Very low source-to-source on resistance
- Compact and thermally enhanced package
- Optimizes circuit layout for bi-directional current flow
- 100% Rg and UIS tested
To save PCB space, reduce component counts and simplify designs, the device uses an optimized package construction with two monolithically integrated TrenchFET Gen IV N‑channel MOSFETs in a common drain configuration. Due to the design of the SiSF20DN source contacts, there is an increase in its contact area with the PCB and a decrease in resistivity. This design makes the MOSFET to work as a bidirectional switching in 24V Systems and industrial applications, factory automation, power tools, drones, motor drives, white goods, robotics, security surveillance, and smoke alarms.
The SiSF20DN is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities of the new MOSFET are available now, with lead times of 30 weeks for larger orders
. For more details on the SiSF20DN visit the official page or refer to the datasheet of this product.