Automotive-grade Hybrid IGBTs with Built-In SiC Diode Reduce Power Consumption while Improving Cost Performance

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ByRajni Setia 0

RGWxx65C Series Hybrid IGBTs

Integrated with 650V SiC Schottky barrier diode, the new RGWxx65C series hybrid IGBTs from ROHM Semiconductor are suitable for automotive and industrial applications that handle high power such as photovoltaic power conditioners, onboard chargers, and DC/DC converters used in electric and electrified vehicles (xEVs).

Qualified under the AEC-Q101 automotive reliability standard, the RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR IGBTs in RGWxx65C series offer up to 67% lower loss over conventional IGBTs and 24% lower loss compared with Super Junction MOSFETs (SJ MOSFETs) when used in-vehicle chargers.

The RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR IGBTs offer features like 650 withstand voltage VCES (V), 1.5 Conduction Loss VCE(sat) Typ (V), SiC SBD Freewheeling Diode, AEC-Q101 qualified. Along with these novel hybrid IGBTs, ROHM offers products utilizing silicon FRDs as the freewheeling diode, as well as products without a freewheeling diode.

The RGWxx65C series are available now and the mass production will start from December 2021 from online distributors Digi-Key, Mouser, and Farnell (scheduled for release by additional online distributors). A broad range of design support material is available on ROHM’s website, including simulation (SPICE) models and application notes on drive circuit design.

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