Vishay Intertechnology launched new 60V TrenchFET Gen IV n-channel power MOSFET optimized for standard gate drives to deliver maximum on-resistance down to 4 mΩ at 10 V in the thermally enhanced 3.3 mm by 3.3 mm PowerPAK® 1212-8S package. The Vishay Siliconix SiSS22DN is designed to increase power density and efficiency in switching topologies featuring a low gate charge of 22.5 nC along with low output charge (QOSS). The SiSS22DN comes with enhanced Threshold Gate Source VGS (th) and Miller plateau voltage which is different from logic-level 60 V devices, so the MOSFET delivers optimized dynamic characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications.
The SiSS22DN MOSFET features lowest possible 4.8% on-resistance and QOSS of 34.2 nC provides best in class QOSS times on-resistance. The devices uses 65 % less PCB space in 6 mm by 5 mm package and achieve higher power density. The SiSS22DN features fine-tuned specifications to reduce conduction and switching losses simultaneously resulting in increased efficiency that can be realized in multiple power management system building blocks, including synchronous rectification in DC/DC and AC/DC topologies; half-bridge MOSFET power stages in buck-boost converters, primary-side switching in DC/DC converters, and OR-ing functionality in telecom and server power supplies; battery protection and charging in battery management modules; and motor drive control and circuit protection in industrial equipment and power tools.
Features of SiSS22DN MOSFET:
- TrenchFET® Gen IV power MOSFET
- Very low RDS - Qg figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
The SiSS22DN MOSFET is 100 % RG- and UIS-tested, halogen-free and RoHS-compliant. It comes in PowerPAK 1212-8S package and samples as well as production quantities are available now, with lead times of 30 weeks subject to market conditions.