40V Dual MOSFET with Low Drain-Source Resistance in Compact 3.3mm x 3.3mm Package for Automotive Applications

40V Dual MOSFET with Low Drain-Source Resistance in Compact 3.3mm x 3.3mm Package for Automotive Applications

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ByRajni Setia 0

DMT47M2LDVQ Dual MOSFET

Diodes Incorporated introduced DMT47M2LDVQ automotive compliant 40V dual MOSFET in a 3.3mm x 3.3mm package for automotive systems. It smartly integrates two n-channel enhancement-mode MOSFETs with the lowest RDS(ON) (10.9mΩ at VGS of 10V and ID of 30.2A).

The low on-resistance conduction helps in keeping the losses to a minimum in applications like wireless charging or motor control. Besides, switching losses are minimized with the help of a typical gate charge of 14.0nC, at a VGS of 10V and ID of 20A.

The thermally efficient PowerDI 3333-8 package of the device returns a junction-to-case thermal resistance (Rthjc) of 8.43°C/W, thereby enabling the development of end applications with a higher power density than with MOSFETs packaged individually. Furthermore, the PCB area needed for implementing automotive features including ADAS is reduced too.

Key Features of DMT47M2LDVQ Dual MOSFET

  • Fast switching speed
  • 100% unclamped inductive switching
  • High conversion efficiency
  • Low RDS(ON) that minimizes on-state losses
  • RDS(ON): 10.9mΩ at VGS of 10V and ID of 30.2A
  • Low input capacitance
  • Two n-channel enhancement mode
  • Thermally efficient PowerDI 3333-8 package

From electric seat control to advanced driver-assistance systems (ADAS), the DMT47M2LDVQ dual MOSFET can reduce the board space footprint in many automotive applications. It is available at the price of $0.45 in 3000-piece quantities.

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