Ultra-Low Capacitance TVS Diode Protects High-Frequency Antennas from ESD

Published  February 25, 2022   0
L Lakshita
Ultra-Low Capacitance TVS Diode

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “DF2B6M4BSL” that is an ultra-low capacitance TVS diode and protects semiconductors and other electronic components from static electricity and noise while suppressing signal deterioration. Designed for high-frequency antennas, this diode delivers a total capacitance of 0.15pF which is 25% lower than the existing products.

Housed in an ultra-compact package (0.62 mm × 0.32 mm), this new diode provides low Vpeak voltage when ESD is applied and superior protective performance. With ultra-low capacitance characteristics, this device is suitable for applications like mobile equipment, IoT equipment, and wearable equipment.

Key Features

  • Low total capacitance: Ct=0.12pF (typ.) / 0.15pF (max) @VR=0V, f=1MHz
  • Low harmonic distortion characteristics
  • Low Vpeak voltage: VCL-max-peak= 215V (Reference) @IEC61000-4-2 (Contact), +8kV input