Published February 25, 2022
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Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “DF2B6M4BSL” that is an ultra-low capacitance TVS diode and protects semiconductors and other electronic components from static electricity and noise while suppressing signal deterioration. Designed for high-frequency antennas, this diode delivers a total capacitance of 0.15pF which is 25% lower than the existing products.
Housed in an ultra-compact package (0.62 mm × 0.32 mm), this new diode provides low Vpeak voltage when ESD is applied and superior protective performance. With ultra-low capacitance characteristics, this device is suitable for applications like mobile equipment, IoT equipment, and wearable equipment.
Key Features
- Low total capacitance: Ct=0.12pF (typ.) / 0.15pF (max) @VR=0V, f=1MHz
- Low harmonic distortion characteristics
- Low Vpeak voltage: VCL-max-peak= 215V (Reference) @IEC61000-4-2 (Contact), +8kV input
