Serial Interface Ferroelectric RAM Provides 2 Mb Density Non-Volatile Storage for Extreme Environments

Published  April 15, 2022   0
L Lakshita
Serial Interface Ferroelectric RAM

Infineon Technologies LLC has announced the availability of new radiation-hardened (rad-hard), serial interface Ferroelectric RAM (F-RAM) that delivers unsurpassed reliability and data retention and is more energy-efficient than non-volatile EEPROM and serial NOR Flash devices for space applications. This new device is ideal for data logging of mission-critical data, telemetry storage, and command and control calibration data storage. Moreover, it can be used for providing boot code storage solutions for microcontrollers, FPGAs and ASICs.

The 2 Mb density F-RAM with SPI is the first in its family of rad-hard non-volatile F-RAMs. These devices have virtually infinite endurance with no wear leveling, with 10 trillion read/write cycles and 120 years of data retention at 85°C, at an operating voltage range of 2.0 V to 3.6 V. The lowest operating current is 10 mA maximum, with an extreme low programming voltage of 2 V.

These rad-hard F-RAMs are also suitable for avionic and other applications that require military standard temperature grades reaching from -55°C to 125°C. Support for the industry-standard Serial Peripheral Interface (SPI) protocol improves ease of use and supports a smaller footprint and lower pin count. Additional features include a small footprint with 16-in ceramic SOP packaging.