New Zero Drift Hall-Effect Current Sensors for High Accuracy Current Measurement

Published  July 8, 2020   0
TMCS1100 and TMCS1101 Zero Drift Hall-Effect Current Sensors

Texas Instruments (TI) introduced theTMCS1100 and TMCS1101, zero-drift Hall-effect current sensors that enable the lowest drift and highest accuracy over time and temperature while providing reliable 3-kVrms isolation. TI has applied the expertise of both isolation and high-precision analog to the TMCS1100 and TMCS1101, this enables the engineers to design systems that will provide consistent performance and diagnostics over a longer device lifetime in a compact solution size without increasing design time.

The Zero-drift architecture and real-time sensitivity compensation of the TMCS1100 and TMCS1101 provide extremely high performance even during the change in temperature and aging of equipment. The device has an industry-leading total sensitivity drift over temperature of 0.45%, maximum, which is at least 200% lower than other magnetic current sensors, it also has a maximum full-scale offset drift of <0.1%, this helps the device to provide the highest measurement of accuracy and reliability across a wide range of current. It also has a 0.5% lifetime sensitivity drift, which is at least 100% lower than other magnetic current sensors.

The new devices provide ultra-high accuracy without any device calibration and they also provide typical linearity of 0.05%, which minimizes signal distortion and helps maintain accuracy. Both devices support a ±600-V lifetime working voltage – up to 40% higher than competing devices in the same 8-pin SOIC package. These new sensors are suitable for AC or DC high voltage systems such as industrial motor drives, solar inverters, energy storage equipment, and power supplies.

Add New Comment

Login to Comment Sign in with Google Log in with Facebook Sign in with GitHub