New Zero Drift Hall-Effect Current Sensors for High Accuracy Current Measurement

Published  July 8, 2020   0
TMCS1100 and TMCS1101 Zero Drift Hall-Effect Current Sensors

Texas Instruments (TI) introduced theTMCS1100 and TMCS1101, zero-drift Hall-effect current sensors that enable the lowest drift and highest accuracy over time and temperature while providing reliable 3-kVrms isolation. TI has applied the expertise of both isolation and high-precision analog to the TMCS1100 and TMCS1101, this enables the engineers to design systems that will provide consistent performance and diagnostics over a longer device lifetime in a compact solution size without increasing design time.

The Zero-drift architecture and real-time sensitivity compensation of the TMCS1100 and TMCS1101 provide extremely high performance even during the change in temperature and aging of equipment. The device has an industry-leading total sensitivity drift over temperature of 0.45%, maximum, which is at least 200% lower than other magnetic current sensors, it also has a maximum full-scale offset drift of <0.1%, this helps the device to provide the highest measurement of accuracy and reliability across a wide range of current. It also has a 0.5% lifetime sensitivity drift, which is at least 100% lower than other magnetic current sensors.

The new devices provide ultra-high accuracy without any device calibration and they also provide typical linearity of 0.05%, which minimizes signal distortion and helps maintain accuracy. Both devices support a ±600-V lifetime working voltage – up to 40% higher than competing devices in the same 8-pin SOIC package. These new sensors are suitable for AC or DC high voltage systems such as industrial motor drives, solar inverters, energy storage equipment, and power supplies.