New GaN MMIC Power Amplifier aids Signal Fidelity by Allowing Earth Stations to Transmit at High RF Levels

Published  February 14, 2022   0
L Lakshita
GMICP2731-10 GaN MMIC Power Amplifier

Microchip Technology Inc. has announced the new GMICP2731-10 GaN MMIC power amplifier that is fabricated using GaN-on-Silicon Carbide (SiC) technology and delivers up to 10W of saturated RF output power across the 3.5 GHz of bandwidth between 27.5 to 31 GHz. This new device is designed for use in commercial and defense satellite communications, 5G networks, and other aerospace and defense systems.

This new power amplifier features power-added efficiency of 20% along with 2dB of small-signal gain and 15dB of return loss. Moreover, a balanced architecture allows the GMICP2731-10 to be well matched to 50-ohms and includes integrated DC blocking capacitors at the output to simplify design integration.

In addition, the GMICP2731-10 power amplifier complements the company’s existing portfolio of GaAs MMIC RF power amplifiers, switches, low-noise amplifiers, and Wi-Fi front-end modules, as well as a GaN-on-SiC High Electron Mobility Transistor (HEMT) driver and final amplifier transistors for radar systems.