Vishay Intertechnology launched a new Siliconix SiR626DP N-Channel 60V TrenchFET Gen IV MOSFET with 6.15mm X 5.15mm PowerPAK SO-8 Single Package. The Vishay Siliconix SiR626DP offers 36% lower on-resistance than its previous version. It combines a maximum on-resistance down to 1.7mW with ultra low gate charge of 52nC at 10V. It also includes output charge of 68nC and COSS of 992pF which is 69% lower than its previous versions.
The SiR626DP has very LOW RDS (Drain-source on Resistance) which increases efficiency in applications such as Synchronous rectification, Primary and second side switch, DC/DC converters, Solar micro converter and Motor Drive switch. The package is Lead (Pb) and Halogen free with 100% RG.
The Key features include:
- VDS : 60V
- VGS : 20V
- RDS(ON) at 10V : 0.0017 Ohms
- RDS(ON) at 7.5V : 0.002 Ohms
- RDS(ON) at 6V : 0.0026 Ohms
- Qg at 10V : 68 nC
- Qgs : 21 nC
- Qgd : 8.2 nC
- ID Max. : 100 A
- PD Max. : 104 W
- VGS(th) : 2 V
- RgType. : 0.91 Ohms
Samples of the SiR626DP are available and production quantities are available with lead times of 30 weeks subject to market situations.
