New 40V N-channel Power MOSFETs with Improved Thermal Performance

New 40V N-channel Power MOSFETs with Improved Thermal Performance

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New 40V N-channel Power MOSFETs with Improved Thermal Performance

In August, Toshiba starts mass production and shipments of its 40V N-channel power MOSFETs - “TPWR7904PB” and “TPW1R104PB”, for automotive applications. They will be available in DSOP Advance(WF) packages that comes with double-sided cooling, low resistance, and small size.

 

The power MOSFETs secure high heat dissipation and low On-resistance characteristics by mounting a U-MOS IX-H series chip, which comes with the latest trench structure, into a DSOP Advance(WF) package. It enables the heat generated by conduction loss to be effectively dissipated, improving the flexibility of thermal design.

 

The U-MOS IX-H series MOSFETs also deliver lower switching noise than Toshiba’s previous U-MOS IV series, contributing to lower EMI. The DSOP Advance(WF) package has a wettable flank terminal structure.

 

The devices are qualified for AEC-Q101, thus suitable for automotive applications; and comprise features such as double-sided cooling package with top plate and drain, improved AOI visibility due to wettable flank structure, and low On-resistance and low noise characteristics. They can be used in automotive applications like Electric power steering, Load switches and Electric pumps.

 

Main Specifications (@Ta=25℃)

Part number

Absolute maximum ratings

Drain-source On-resistance
RDS(ON) max(mΩ)

Built-in Zener Diode between Gate-Source

Series

Package

Drain- source voltage VDSS
(V)

Drain current (DC) ID
(A)

@VGS
6V

@VGS= 10V

TPWR7904PB

40

150

1.3

0.79

No

U-MOS IX-H

DSOP Advance(WF)L

TPW1R104PB

120

1.96

1.14

DSOP Advance(WF)M

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