-30 V and -40 V P-Channel MOSFETs Use 50 % Less Space Over DPAK, Increase Board-Level Reliability

Published  March 8, 2019   0
-30 V and -40 V P-Channel MOSFETs Use 50 % Less Space Over DPAK, Increase Board-Level Reliability

Vishay Intertechnology introduced new 30V- SQJ407EP  and 40V- SQJ409EP Automotive Grade p-channel TrenchFET power MOSFETs in the PowerPAK SO-8L package  measuring 5 mm x 6 mm  package with gullwing leads for increased board-level reliability. The MOSFETs released today offer high temperature operation to +1750C and are AEC-Q101 qualified with 100% Rg, UIS tested, lead-free, halogen free, RoHS-compliant.

 

The devices released today offer more than 50% reduction area in mounting compared to its devices in DPAK.  It saves PCB space and lower costs, while delivering the low on-resistance than any MOSFET with gullwing leads. The devices comes with on-resistance down to 4.4 mΩ and 7.0 mΩ at 10V. The devices make ideal load switches that do not require a charge pump to provide the positive gate bias needed by their n-channel counterparts.

 

The common specifications are as:

  • Channel: p-channel
  • VGS = 20V
  • ID Max = 60 A
  • PD Max = 68 W
  • QGS = 24 nC

 

The samples and production quantiies of the 30V SQJ407EP  and -40V SQJ409EP are available now.