Hi
Unsure if have this right, using 4channel wireless reciever, with a MOS FET Trigger Switch Driver Module PWM.
To drive a 12v electomagnet momentary.
Unsure if have it right?? Any help much appreciated.
Thanks for reply Sourav. Have not tested. As unsure of what mosfet i would need, that many out there.
Just using a standard PP3 9v battery.
Thanks
Choose something that has very low RDSon resistance. This type of devices produce very low amount of output voltage. Choose something that is logic level mosfet such as P90NF03L.
Again Sourav, big thanks, as no idea which to go for, try to figure datasheed, HA no idea..
Thank you again...
Hmm the P90NF03L not available in my country UK, but from China...:-(
Looking at the irfz44n ? Thank you
Manufacturer International Rectifier (Infineon Technologies) Description MOSFET N-CH 55V 49A TO-220AB Package / Case Tube Quantity Available 8808 Series HEXFET® Technology MOSFET (Metal Oxide) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Power Dissipation (Max) 94W (Tc) FET Type N-Channel FET Feature - Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V Drive Voltage (Max Rds On, Min Rds On) 10V Vgs (Max) ±20V Packaging Tube IRFZ44NPBF 8808pcs New and Original in Stock, Find IRFZ44NPBF Stock, Datasheet, PDF, Inventory at Ariat-Tech.com Online, Order IRF
Ok will try both IRFZ44N mosfet and think NPN transistor not PNP
Thanks again
Thanks Sourav :-)
Just going to go with the
©2002 Fairchild Semiconductor CorporationRev. A1, August 2002BC184LAbsolute Maximum Ratings TC=25°Cunless otherwise notedElectrical Characteristics TC=25°C unless otherwise notedNotes:1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.3. These ratings are based on a maximum junction temperature of 150degrees C.SymbolParameterValueUnitsVCBOCollector-Base Voltage45VVCEOCollector-Emitter Voltage30VVEBOEmitter-Base Voltage5VICCollector Current (DC)500mAPCCollector Dissipation (Ta=25°C) (Note 2, 3)350mWTJJunction Temperature150°CTSTGStorage Temperature- 55 ~ 150°CSymbolParameterTest ConditionMin.Typ.Max.UnitsBVCBOCollector-Base VoltageIC = 10μA45VBVCEOCollector-Emitter VoltageIC = 2mA30VBVEBOEmitter-Base VoltageIE = 10μA5VICBOCollector Cut-off CurrentVCB = 30V15nAIEBOEmitter Cut-off CurrentVEB = 3V 15nAhFEDC Current GainVCE = 5V, IC = 10μAVCE = 5V, IC = 100mA100130VCE(sat)Collector-Emitter Saturation VoltageIC = 10mA, IB = 0.5mAIC = 100mA, IB = 5mA0.60.25VVBE(sat)Base-Emitter Saturation VoltageIC = 100mA, IB = 5mA 1.2VVBE(on)Base-Emitter On VoltageVCE = 5V, IC = 2mA0.550.7VCOBOutput CapacitanceVCE = 10V, f = 1MHz5pFfTCurrent gain Bandwidth ProductVCE = 5V, IC = 10mAf = 100MHz150MHzhFESmall Signal Current GainVCE = 5V, IC = 2mAf = 1KHz450900NFNoise FigureVCE = 5V, IC = 200mARG = 2KΩ, f = 1KHz4dBC184L General Purpose NPN Transistor.
Could you suggest a small bedia player, just need to store 1 music file play 3 mins.
For the Nano please?
BW
You could get plenty of options in circuit digest about how to play music or how to store files in media card.
Please make a separate thread so that other could also get notified about the new questions as well as contribute in the same.
Chapal
PermalinkWell I have been searching for the same question. If you find it kindly do letme know about. I will be very thankful and highly appreciate this
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