Infineon Technologies AG introduces its latest innovation, the silicon carbide (SiC) CoolSiC™ MOSFET 650V in TO leadless (TOLL) packaging, to address the growing demand for energy-efficient power solutions amid the rise of digitalization, urbanization, and electro-mobility. Designed to optimize energy efficiency and reliability, the new CoolSiC MOSFETs offer superior performance in applications such as SMPS for servers, telecom infrastructure, energy storage systems, and battery formation solutions.
The CoolSiC 650V MOSFETs are offered in a JEDEC-qualified TOLL package, boasting low parasitic inductance for increased switching frequency and reduced losses. This design enables efficient thermal management and automated assembly, while the compact form factor empowers system designers to achieve exceptional power density. Thanks to their remarkable reliability, even in harsh environments, these SiC MOSFETs are ideal for topologies with repetitive hard commutation.
The innovative .XT interconnect technology further enhances thermal performance, and the devices feature a robust body diode and the strongest gate oxide (GOX) in the market, resulting in extremely low FIT rates. The wide driving interval of the gate-source voltage ensures ease-of-use and compatibility with other SiC MOSFETs and standard MOSFET gate-driver ICs, reducing system complexity and production costs. Infineon's CoolSiC MOSFET 650V TOLL industrial-grade discretes, available in various RDS(on) options, are now ready for order, promising cutting-edge power solutions for a wide range of applications. For more information, visit www.infineon.com/coolsic-mosfet-discretes.
